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Number of hours
Lectures : 10.5
Tutorials : 9.0
Laboratory works : -
Projects : -
Internship : -
Written tests : -
ECTS : 1.5
Officials :Romain SIRAGUSA
To be able to make the connection between the electronic band structure of a semiconductor (SC) and its crystal structure. To be able to interpret a global representation of an atom in terms of energy band. To be able to make a differentiation between insulator, semiconductor and metal based on the electronic band structure of such materials. To be able to understand why a semiconductor is doped. To know how to interpret the energy band induced by doping. To be able to associate an energy band to different carriers present in an extrinsic SC. To be able to calculate the carrier densities present in an intrinsic and extrinsic SC. To be able to model the transport phenomena present in an extrinsic SC due to an external perturbation. To be able to explain how a PN junction operates. To be able to make the link between the macroscopic (nonlinear behavior) and microscopic behavior of a PN junction.
I. Fundamentals of semiconductors Crystalline structure Electronic band in semiconductors Intrinsic semiconductor in thermodynamic equilibrium Extrinsic semiconductor in thermodynamic equilibrium II. Non-equilibrium Electrical Properties of Semiconductors Small perturbations of the equilibrium III. PN junction Junction at thermodynamic equilibrium Non-equilibrium junction
Practical use of diodes and transistors. Local ohm’s law, electrostatic forces (PH121 - Electrostatic-Magnetostatics), energy concepts, Notions of electromotive forces.
Evaluation Exam 1H30, Undocumented, No calculator CC = continuous assessment Exam EXAM = Final Exam